GeChi Compound Semiconductor Co., Ltd.
Update：2024/08/05
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Main Product/Service
Gechi 6-Inch N-Type Silicon Carbide (SiC) Ingot & Wafer
Premium Substrates for Advanced Compound Semiconductor Applications
Gechi specializes in high-quality compound semiconductor materials, offering both 6-inch N-Type Silicon Carbide (SiC) ingots and wafers designed to meet the demanding requirements of high-power, high-frequency, and high-temperature electronic devices. With stringent quality controls and advanced manufacturing, our products ensure excellent crystal integrity, electrical performance, and surface precision.
6-Inch N-Type Silicon Carbide Ingot
Our SiC ingots feature ultra-low micropipe density, precise crystal orientation, and stable resistivity, making them ideal for high-performance device fabrication. Manufactured with rigorous quality standards, these ingots exhibit no cracks, hexagonal plate defects, or polytype inclusions. They are available in production and dummy grades with thicknesses greater than 8 mm and 5 mm, respectively.
6-Inch N-Type Silicon Carbide Wafer
Gechi’s wafers are sliced from high-grade ingots and polished to meet strict flatness, roughness, and defect criteria. They offer ultra-low micropipe densities, consistent resistivity, and excellent surface quality, including minimal scratches and edge chips. Both production and dummy grades are available to accommodate various application needs. The wafers maintain tight tolerances on thickness, orientation, and flat length to ensure compatibility with advanced semiconductor processes.
Premium Substrates for Advanced Compound Semiconductor Applications
Gechi specializes in high-quality compound semiconductor materials, offering both 6-inch N-Type Silicon Carbide (SiC) ingots and wafers designed to meet the demanding requirements of high-power, high-frequency, and high-temperature electronic devices. With stringent quality controls and advanced manufacturing, our products ensure excellent crystal integrity, electrical performance, and surface precision.
6-Inch N-Type Silicon Carbide Ingot
Our SiC ingots feature ultra-low micropipe density, precise crystal orientation, and stable resistivity, making them ideal for high-performance device fabrication. Manufactured with rigorous quality standards, these ingots exhibit no cracks, hexagonal plate defects, or polytype inclusions. They are available in production and dummy grades with thicknesses greater than 8 mm and 5 mm, respectively.
6-Inch N-Type Silicon Carbide Wafer
Gechi’s wafers are sliced from high-grade ingots and polished to meet strict flatness, roughness, and defect criteria. They offer ultra-low micropipe densities, consistent resistivity, and excellent surface quality, including minimal scratches and edge chips. Both production and dummy grades are available to accommodate various application needs. The wafers maintain tight tolerances on thickness, orientation, and flat length to ensure compatibility with advanced semiconductor processes.
Founded Year
2022
Unified Business No.
90282276
Status
Active
Number of Employees
0
Total Paid-in
Capital
700,000,000 (NT$)
Year of establishment, company status, responsible person, paid-in capital amount, and registered address are sourced from the "Commerce Industrial Services Portal, Department of Commerce, Ministry of Economic Affairs.
Location of Company
Taiwan
, Taoyuan City
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Introduction
GCCS was founded in 2022, and its parent company is GUS Technology, a domestic lithium battery company.
As a professional silicon carbide (SiC) technology supplier, GCCS has a wealth of expertise in crystal growth and the design of the thermal field. With the rapid development of the industry, GCCS gains an in-depth understanding of third-generation semiconductor materials through its existing expertise and commits to the technological development and manufacture of crystal growth and wafers. Meanwhile, GCCS is constantly pursuing a more meticulous manufacturing process and quality optimization to meet the needs of customers and the market. Furthermore, we emphasize the vertical integration of the industrial chain and expect to promote industrial development.
The third-generation semiconductor material silicon carbide is a wide-bandgap component with excellent physical properties. It is expected to be widely used in producing semiconductor chips in the years to come and become the new favorite semiconductor material. Meanwhile, this indicates that silicon carbide component will play a vital role in fields of high-frequency and high-power electronics, such as the applications of 5G communications, electric vehicles, energy, and other industries. The market demand for the material has been arisen.
In the highly competitive industrial environment, GCCS keeps paying attention to current and future market development in the spirit of investigating things and extending knowledge to the utmost. GCCS will continuously innovate, improve the quality of products, and provide customers with better choices and solutions with professionalism and excellent services. We hope to create more valuable competitive advantages for customers and partners on the way to the third-generation semiconductor market, and thus realize a better future for all.
As a professional silicon carbide (SiC) technology supplier, GCCS has a wealth of expertise in crystal growth and the design of the thermal field. With the rapid development of the industry, GCCS gains an in-depth understanding of third-generation semiconductor materials through its existing expertise and commits to the technological development and manufacture of crystal growth and wafers. Meanwhile, GCCS is constantly pursuing a more meticulous manufacturing process and quality optimization to meet the needs of customers and the market. Furthermore, we emphasize the vertical integration of the industrial chain and expect to promote industrial development.
The third-generation semiconductor material silicon carbide is a wide-bandgap component with excellent physical properties. It is expected to be widely used in producing semiconductor chips in the years to come and become the new favorite semiconductor material. Meanwhile, this indicates that silicon carbide component will play a vital role in fields of high-frequency and high-power electronics, such as the applications of 5G communications, electric vehicles, energy, and other industries. The market demand for the material has been arisen.
In the highly competitive industrial environment, GCCS keeps paying attention to current and future market development in the spirit of investigating things and extending knowledge to the utmost. GCCS will continuously innovate, improve the quality of products, and provide customers with better choices and solutions with professionalism and excellent services. We hope to create more valuable competitive advantages for customers and partners on the way to the third-generation semiconductor market, and thus realize a better future for all.
